Nickel oxide thin films synthesized by reactive pulsed laser deposition:: characterization and application to hydrogen sensing

被引：37

作者：

Fasaki, I. ^{[1
,2
]}

Giannoudakos, A. ^{[1
,2
]}

Stamataki, M. ^{[1
]}

Kompitsas, M. ^{[1
]}

Gyorgy, E. ^{[3
,4
]}

Mihailescu, I. N. ^{[4
]}

Roubani-Kalantzopoulou, F. ^{[2
]}

Lagoyannis, A. ^{[5
]}

Harissopulos, S. ^{[5
]}

机构：

[1] Natl Hellen Res Fdn, Inst Theoret & Phys Chem, GR-11635 Athens, Greece

[2] Natl Tech Univ Athens, Sch Chem Engn, Athens 15780, Greece

[3] UAB, Inst Ciencia Mat Barcelona, Consejo Superior Investigac Cient, Bellaterra 08193, Spain

[4] Inst Atom Phys, Bucharest 77125, Romania

[5] NCSR Demokritos, Inst Nucl Phys, GR-15310 Athens, Greece

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2008年 / 91卷 / 03期

关键词：

D O I：

10.1007/s00339-008-4435-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transparent nickel oxide thin films were grown by reactive pulsed laser deposition. An ArF* (lambda = 193 nm, tau = 12 ns) excimer laser source was used to ablate the Ni targets in a controlled pressure of ambient oxygen. The substrates were either kept at room temperature or heated to a selected temperature within the 200-400 degrees C range. Post-deposition heat treatment, which was applied to further promote crystallization and overcome any oxygen deficiency, yielded transparent thin films. The surface morphology and crystalline status of the synthesized thin structures were analyzed in correlation with their optical properties. A significant response to several concentrations of hydrogen was demonstrated when heating the nickel oxide films at 185 degrees C.

引用

页码：487 / 492

页数：6

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