A Route to Nanoscopic Materials via Sequential Infiltration Synthesis on Block Copolymer Templates

被引:254
作者
Peng, Qing [2 ]
Tseng, Yu-Chih [1 ]
Darling, Seth B. [1 ]
Elam, Jeffrey W. [2 ]
机构
[1] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA
[2] Argonne Natl Lab, Div Energy Syst, Argonne, IL 60439 USA
关键词
atomic layer deposition; sequential infiltration; block copolymer; nano; silicon dioxide; ATOMIC-LAYER DEPOSITION; THIN-FILMS; SURFACE-CHEMISTRY; NANOSTRUCTURES; SEMICONDUCTORS; LITHOGRAPHY; POLYMERS; GROWTH; OXIDE;
D O I
10.1021/nn2003234
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Sequential infiltration synthesis (MS), combining stepwise molecular assembly reactions with self-assembled block copolymer (BCP) substrates, provides a new strategy to pattern nanoscopic materials in a controllable way. The selective reaction of a metal precursor with one of the pristine BCP domains Is the key step in the SIS process. Here we present a straightforward strategy to selectively modify self-assembled polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) BCP thin films to enable the SIS of a variety of materials including SiO2, ZnO, and W. The selective and controlled interaction of trimethyl aluminum with carbonyl groups in the PMMA polymer domains generates Al-CH3/Al-OH sites inside the BCP scaffold which can seed the subsequent growth of a diverse range of materials without requiring complex block copolymer design and synthesis.
引用
收藏
页码:4600 / 4606
页数:7
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