InAs/InP Quantum Dots in Etched Pits by Droplet Epitaxy in Metalorganic Vapor Phase Epitaxy

被引：21

作者：

Sala, Elisa Maddalena ^{[1
]}

Na, Young In ^{[2
]}

Godsland, Max ^{[2
]}

Trapalis, Aristotelis ^{[1
]}

Heffernan, Jon ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Natl Epitaxy Facil, North Campus Broad Lane, Sheffield S37HQ, S Yorkshire, England

[2] Univ Sheffield, Dept Elect & Elect Engn, North Campus Broad Lane, Sheffield S37HQ, S Yorkshire, England

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2020年 / 14卷 / 08期

基金：

英国工程与自然科学研究理事会; “创新英国”项目;

关键词：

atomic force microscopy; droplet epitaxy; III-V quantum dots; metalorganic vapor phase epitaxy; photoluminescence; GROWTH; GAAS; INP; MBE;

D O I：

10.1002/pssr.202000173

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth of InAs quantum dots (QDs) on InP(100) via droplet epitaxy in a metalorganic vapor phase epitaxy (MOVPE) reactor is studied. Formation of indium droplets is investigated with varying substrate temperature, and spontaneous formation of nanoholes is observed for the first time under MOVPE conditions. Indium droplets are crystallized into QDs under arsenic flow at different temperatures. For temperatures greater than 500 degrees C, a local etching takes place in the QD vicinity, showing an unexpected morphology which is found to be strongly dependent on the crystallization conditions. Such QDs are structurally and optically investigated and emission from single QDs in the telecom C-band is detected via microphotoluminescence at low temperature.

引用

页数：6

共 38 条

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