Quantitative Investigation of light induced defects in glassy Se90Ag10 thin films

被引：0

作者：

Kumar, Anjani ^{[1
]}

Kumar, D. ^{[2
]}

Dwivedi, Prabhat K. ^{[3
]}

Kumar, A. ^{[1
]}

机构：

[1] Harcourt Butler Technol Inst, Dept Phys, Kanpur, Uttar Pradesh, India

[2] JSS Acad Tech Educ, Dept Phys, Noida, India

[3] Indian Inst Technol, Ctr Nanosci, Kanpur, Uttar Pradesh, India

来源：

DAE SOLID STATE PHYSICS SYMPOSIUM 2015 | 2016年 / 1731卷

关键词：

Thin film; light induced meta stable defects; prolonged exposure; CHALCOGENIDE GLASSES; GAP;

D O I：

10.1063/1.4947855

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An attempt is made to investigate light induced defects (LID) in amorphous chalcogenide Se90Ag10 thin films prepared by vacuum evaporation technique. For the determination of light induced defects quantitatively, space charge limited current (SCLC) measurements have been made in a vacuum similar to 10(-3) Torr before and after exposing amorphous films to white light for different exposure times (0 to 6 hours). Results indicate that light induced defects are created due to prolonged exposure of light which is explained by a microscopic model for light induced defects creation proposed by Shimakawa and co-workers.

引用

页数：3

共 19 条

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