Influence of α-Al2O3 Template and Process Parameters on Atomic Layer Deposition and Properties of Thin Films Containing High-Density TiO2 Phases

High-density phases of TiO2, such as rutile and high-pressure TiO2-II, have attracted interest as materials with high dielectric constant and refractive index values, while combinations of TiO2-II with anatase and rutile have been considered promising materials for catalytic applications. In this work, the atomic layer deposition of TiO2 on alpha-Al2O3 (0 0 0 1) (c-sapphire) was used to grow thin films containing different combinations of TiO2-II, anatase, and rutile, and to investigate the properties of the films. The results obtained demonstrate that in a temperature range of 300-400 & DEG;C, where transition from anatase to TiO2-II and rutile growth occurs in the films deposited on c-sapphire, the phase composition and other properties of a film depend significantly on the film thickness and ALD process time parameters. The changes in the phase composition, related to formation of the TiO2-II phase, caused an increase in the density and refractive index, minor narrowing of the optical bandgap, and an increase in the hardness of the films deposited on c-sapphire at T-G & GE; 400 & DEG;C. These properties, together with high catalytic efficiency of mixed TiO2-II and anatase phases, as reported earlier, make the films promising for application in various functional coatings.