Metal to insulator transition at the surface of V2O3 thin films: An in-situ view

被引：12
作者：
Caputo, M. [1 ,2 ]
Jandke, J. [1 ]
Cappelli, E. [3 ]
Chaluvadi, S. K. [4 ]
Guedes, E. Bonini [1 ]
Naamneh, M. [1 ]
Vinai, G. [4 ]
Fujii, J. [4 ]
Torelli, P. [4 ]
Vobornik, I [4 ]
Goldoni, A. [2 ]
Orgiani, P. [4 ,5 ]
Baumberger, F. [1 ,3 ]
Radovic, M. [1 ]
Panaccione, G. [4 ]
机构：
[1] Paul Scherrer Inst, Photon Sci Div, CH-5232 Villigen, Switzerland
[2] Elettra Sincrotrone Trieste, Ss 14 Km 163-5 Area Sci Pk, I-34149 Trieste, Italy
[3] Univ Geneva, Dept Quantum Matter Phys, 24 Quai Ernest Ansermet, CH-1211 Geneva, Switzerland
[4] Ist Officina Mat IOM CNR, Lab TASC, Area Sci Pk,SS 14 Km 163-5, I-34149 Trieste, Italy
[5] CNR SPIN, UOS Salerno, I-84084 Fisciano, SA, Italy
来源：
APPLIED SURFACE SCIENCE | 2022年 / 574卷
关键词：
V2O3; ARPES; MIT; PLD; in-situ transfer; ORBITAL OCCUPATION; SPECTROSCOPY; SPIN;
D O I：
10.1016/j.apsusc.2021.151608
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
V2O3 has long been studied as a prototypical strongly correlated material. The difficulty in obtaining clean, well ordered surfaces, however, hindered the use of surface sensitive techniques to study its electronic structure. Here we show by means of X-ray diffraction and electrical transport that thin films prepared by pulsed laser deposition can reproduce the functionality of bulk V2O3. The same films, when transferred in-situ, show an excellent surface quality as indicated by scanning tunnelling microscopy and low energy electron diffraction, representing a viable approach to study the metal-insulator transition in V2O3 by means of angle-resolved photoemission spectroscopy. Combined, these two aspects pave the way for the use of V2O3 thin films in device-oriented heterostructures.
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页数：7
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