Electronic structure and thermoelectric prospects of phosphide skutterudites

被引:66
作者
Fornari, M [1 ]
Singh, DJ
机构
[1] George Mason Univ, CSI, Fairfax, VA 22030 USA
[2] USN, Res Lab, Complex Syst Theory Branch, Washington, DC 20375 USA
来源
PHYSICAL REVIEW B | 1999年 / 59卷 / 15期
关键词
D O I
10.1103/PhysRevB.59.9722
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The prospects or high thermoelectric performance in phosphide skutterudites are investigated based on first-principles calculations. We find that stoichiometric CoP3 differs from the corresponding arsenide and antimonide in that it is metallic. As such, the band structure must be modified if high thermopowers are to be achieved. In analogy to the antimonides it is expected that this may be done by filling with La, Calculations for LaFe4P12 show that a gap can in fact be opened by La filling, but that the valence band is too light to yield reasonable p-type thermopowers at appropriate carrier densities; n-type La-filled material may be more favorable. [S0163-1829(99)08415-5].
引用
收藏
页码:9722 / 9724
页数:3
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