Demonstration of a Room-Temperature InP-Based Photodetector Operating Beyond 3 μm

被引：44
作者：
Chen, Baile [1 ]
Jiang, W. Y. [1 ]
Yuan, Jinrong [1 ]
Holmes, Archie L., Jr. [1 ]
Onat, Bora. M. [2 ]
机构：
[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
[2] Princeton Lightwave Inc, Cranbury, NJ 08512 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2011年 / 23卷 / 04期
基金：
美国国家科学基金会;
关键词：
Detectivity; GaAsSb; InGaAs; mid-wavelength infrared (MWIR); photodiode; type-II multiple quantum wells (MQWs); INFRARED DETECTORS;
D O I：
10.1109/LPT.2010.2096205
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An InP-based p-i-n photodiode with optical response out to 3.4 mu m was designed and grown by molecular beam epitaxy (MBE). One hundred pairs of 7-nm In(0.34)Ga(0.66)As/5-nm GaAs(0.25)Sb(0.75) quantum wells strain compensated to InP were used as the absorption region. The device showed a dark current density of 9.6 mA/cm(2) under -0.5-V reverse bias, a responsivity of 0.03 A/W, and a detectivity of 2.0 X 10(8) cm . Hz(1/2) . W(-1) at 3 mu m at 290 K.
引用
收藏
页码：218 / 220
页数：3
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