Demonstration of a Room-Temperature InP-Based Photodetector Operating Beyond 3 μm

被引：45

作者：

Chen, Baile ^{[1
]}

Jiang, W. Y. ^{[1
]}

Yuan, Jinrong ^{[1
]}

Holmes, Archie L., Jr. ^{[1
]}

Onat, Bora. M. ^{[2
]}

机构：

[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA

[2] Princeton Lightwave Inc, Cranbury, NJ 08512 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2011年 / 23卷 / 04期

基金：

美国国家科学基金会;

关键词：

Detectivity; GaAsSb; InGaAs; mid-wavelength infrared (MWIR); photodiode; type-II multiple quantum wells (MQWs); INFRARED DETECTORS;

D O I：

10.1109/LPT.2010.2096205

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An InP-based p-i-n photodiode with optical response out to 3.4 mu m was designed and grown by molecular beam epitaxy (MBE). One hundred pairs of 7-nm In(0.34)Ga(0.66)As/5-nm GaAs(0.25)Sb(0.75) quantum wells strain compensated to InP were used as the absorption region. The device showed a dark current density of 9.6 mA/cm(2) under -0.5-V reverse bias, a responsivity of 0.03 A/W, and a detectivity of 2.0 X 10(8) cm . Hz(1/2) . W(-1) at 3 mu m at 290 K.

引用

页码：218 / 220

页数：3

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