Highly Sensitive Nanotesla Quantum-Well Hall-Effect Integrated Circuit Using GaAs-InGaAs-AlGaAs 2DEG

被引：20

作者：

Sadeghi, Mohammadreza ^{[1
]}

Sexton, James ^{[1
]}

Liang, Chen-Wei ^{[1
]}

Missous, Mohamed ^{[1
]}

机构：

[1] Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England

来源：

IEEE SENSORS JOURNAL | 2015年 / 15卷 / 03期

基金：

英国科学技术设施理事会;

关键词：

Linear Hall effect integrated circuit; LHEIC; 2DEG; GaAs-InGaAs-AlGaAs; pHEMT; OFFSET REDUCTION; CMOS TECHNOLOGY; LP-MOCVD; SENSOR; HETEROSTRUCTURES; DEVICES; PLATES;

D O I：

10.1109/JSEN.2014.2368074

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on the first low power (10.4 mW) and ultrasensitive linear Hall-effect integrated circuits (LHEICs) using GaAs-InGaAs-AlGaAs 2D electron gas technology. These LHEICs have a state-of-the-art sensitivity of 533 mu V/mu T and are capable of detecting magnetic fields as low as 177 nT (in a 10-Hz bandwidth), at frequencies from 500 Hz to 200 kHz. This provides at least an order of magnitude improvement in sensitivity and a factor of four improvements in detectability of small fields, compared with commercial Si linear Hall ICs.

引用

页码：1817 / 1824

页数：8

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