Field-effect devices utilizing LaAlO3-SrTiO3 interfaces

被引：112

作者：

Foerg, B. ^{[2
]}

Richter, C. ^{[1
,2
]}

Mannhart, J. ^{[1
]}

机构：

[1] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany

[2] Univ Augsburg, Ctr Elect Correlat & Magnetism, D-86135 Augsburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 05期

关键词：

Lanthanum compounds - Aluminum compounds - Gate dielectrics;

D O I：

10.1063/1.3682102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using LaAlO3-SrTiO3 bilayers, we have fabricated field-effect devices that utilize the two-dimensional electron liquid generated at the bilayers' n-type interfaces as drain-source channels and the LaAlO3 layers as gate dielectrics. With gate voltages well below 1V, the devices are characterized by voltage gain and current gain. The devices were operated at temperatures up to 100 degrees C. (C) 2012 American Institute of Physics. [doi:10.1063/1.3682102]

引用

页数：3

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