Temperature and irradiation species dependence of radiation response of nanocrystalline silicon carbide

被引：33

作者：

Jamison, Laura ^{[1
]}

Sridharan, Kumar ^{[2
,3
]}

Shannon, Steve ^{[4
]}

Szlufarska, Izabela ^{[1
,2
,3
]}

机构：

[1] Univ Wisconsin, Mat Sci Program, Madison, WI 53706 USA

[2] Univ Wisconsin, Dept Engn Phys, Madison, WI 53706 USA

[3] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA

[4] N Carolina State Univ, Dept Nucl Engn, Raleigh, NC 27695 USA

来源：

JOURNAL OF MATERIALS RESEARCH | 2014年 / 29卷 / 23期

关键词：

SIC SINGLE-CRYSTALS; ELECTRON-IRRADIATION; INDUCED AMORPHIZATION; AMORPHOUS TRANSITION; FUEL PERFORMANCE; INDUCED DEFECTS; RESISTANCE; CERAMICS; BEHAVIOR; ENERGY;

D O I：

10.1557/jmr.2014.340

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The grain size dependence of the radiation response of silicon carbide (SiC) has been studied under 1.0 MeV Kr2+ ion irradiation. It was found that radiation resistance decreased with grain refinement, in contrast to previous studies on the same nanocrystalline (nc) SiC material using Si ion and high voltage electron irradiation. The effect of grain size on radiation response may depend upon the ion species used due to a potential change in amorphization mechanism. It was also determined that temperature had a strong effect on the grain size dependence of the radiation response in SiC due to the activation temperatures of critical recombination and migration reactions. This work explores the possible impacts of irradiation species, temperature, and experimental design on the radiation response of SiC.

引用

页码：2871 / 2880

页数：10

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