Nonlinear charge transport in bipolar semiconductors due to electron heating

被引：3
|
作者：
Molina-Valdovinos, S. [1 ]
Gurevich, Yu. G. [2 ]
机构：
[1] Univ Autonoma Zacatecas, Unidad Acad Fis, Bufa S-N, Zacatecas 98060, Zac, Mexico
[2] IPN, Ctr Invest & Estudios Avanzados, Dept Fis, Ave IPN 2508, Mexico City 07360, DF, Mexico
来源：
PHYSICS LETTERS A | 2016年 / 380卷 / 24期
关键词：
Recombination; Temperature; Nonlinearity; Current voltage characteristic; HOT-ELECTRONS; RECOMBINATION; CARRIERS; IONIZATION; CAPTURE; FIELD; SI;
D O I：
10.1016/j.physleta.2016.04.022
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
It is known that when strong electric field is applied to a semiconductor sample, the current voltage characteristic deviates from the linear response. In this letter, we propose a new point of view of nonlinearity in semiconductors which is associated with the electron temperature dependence on the recombination rate. The heating of the charge carriers breaks the balance between generation and recombination, giving rise to nonequilibrium charge carriers concentration and nonlinearity. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：2021 / 2024
页数：4
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