A 5.8 GHz linear power amplifier in a standard 90nm CMOS process using a 1V power supply

A fully integrated 5.8 GHz Class AB linear power amplifier (PA) in a standard 90nm CMOS process using thin oxide transistors utilizes a novel on-chip transformer power combining network. The transformer combines the power of four push-pull stages with low insertion loss over the bandwidth of interest and is compatible with standard CMOS process without any additional analog or RF enhancements. With a 1 V power supply, the PA achieves 24.3dBm maximum output power at a peak drain efficiency of 27% and 20.5dBm output power at the I dB compression point.