Active Matrix Electronic Skin Strain Sensor Based on Piezopotential-Powered Graphene Transistors

被引：295
作者：
Sun, Qijun [1 ]
Seung, Wanchul [2 ]
Kim, Beom Joon [1 ]
Seo, Soonmin [4 ]
Kim, Sang-Woo [1 ,2 ]
Cho, Jeong Ho [1 ,3 ]
机构：
[1] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea
[2] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea
[3] Sungkyunkwan Univ, Sch Chem Engn, Suwon 440746, South Korea
[4] Gachon Univ, Coll BioNano Technol, Songnam 461701, South Korea
来源：
ADVANCED MATERIALS | 2015年 / 27卷 / 22期
基金：
新加坡国家研究基金会;
关键词：
active matrix; electronic skin; graphene transistors; piezopotential powering; strain sensors; THIN-FILM TRANSISTORS; GEL GATE DIELECTRICS; FIELD-EFFECT TRANSISTORS; PRESSURE SENSOR; PIEZOELECTRIC NANOGENERATOR; POLY(VINYLIDENE FLUORIDE); ARTIFICIAL SKIN; LARGE-AREA; TRANSPARENT; CAPACITANCE;
D O I：
10.1002/adma.201500582
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A piezopotential-powered active matrix strain sensor array based on a piezopotential-gated graphene transistor (GT) is demonstrated using a piezoelectric polymer. The strain sensor based on the piezopotential-gated GT exhibits excellent performance, including ultrahigh sensitivity (gauge factor = 389) and good durability (>3000 bending and releasing cycles) with a minimum detectable strain at 0.008%. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：3411 / 3417
页数：7
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