Effect of 6.5 MeV Proton Irradiation on the Performance of 4H-SiC Schottky Barrier Photodiode

被引：0

作者：

Rasouli, Farhood ^{[1
]}

Hemmat, Zahra ^{[1
]}

Alizad, Sina Haji ^{[1
]}

机构：

[1] KN Toosi Univ Technol, Tehran, Iran

来源：

2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRO/INFORMATION TECHNOLOGY (EIT) | 2015年

关键词：

Proton Irradiation; Silicon carbide; Schottky photodiode; Device Performance; VOLTAGE; AREA; 6H; 4H;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Irradiation introduces some electronic energy levels within the forbidden energy gap of semiconductors. In this paper, the effects of energy levels caused by proton irradiation with different fluences on the device performance of a 4H-SiC Schottky barrier ultraviolet photodiode is investigated. The modeling for resulting energy levels is carried out by a 2D device simulator. Results for electrical and optical properties of the irradiated photodiode compared to the unirradiated one is obtained by simulation. In this paper, it is demonstrated that series resistance changes from 28.8 m Omega for the unirradiated photodiode to 47.8 m Omega for the irradiated photodiode at highest fluence exposure. A significant reduction in quantum efficiency is observed for the photodiode at wavelengths longer than about 270 nm as the irradiation fluence increases.

引用

页码：432 / 435

页数：4

共 19 条

[1] Deep levels by proton and electron irradiation in 4H-SiC [J].