High-silicon-concentration TSI process for 193nm lithography

被引：0

作者：

Mori, S ^{[1
]}

Morisawa, T ^{[1
]}

Matsuzawa, N ^{[1
]}

Kaimoto, Y ^{[1
]}

Endo, M ^{[1
]}

Matsuo, T ^{[1
]}

Kuhara, K ^{[1
]}

Ohfuji, T ^{[1
]}

Sasago, M ^{[1
]}

机构：

[1] Assoc Super Adv Elect Technol, Yokohama, Kanagawa 244, Japan

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2 | 1998年 / 3333卷

关键词：

193-nm lithography; ArF excimer laser; top surface imaging; high-silicon-concentration; silylated layer flow; glass transition temperature; etching resistance; dry development;

D O I：

10.1117/12.312359

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A high-silicon-concentration top surface imaging (TSI) process for 193-nm lithography has been developed using vapor phase silylation, using dimethylaminopentamethyldisiloxane (DMAPMDSO) as a silylation agent and polydihydroxystyrene (PDHS) as a resist material. The etching rate of silylated resist can be explained by the relationship between the silicon content, the decomposition temperature, and the density. The pattern profile of the new TSI process can resolve 0.14 mu mL/S. Although silylated layer flow occurs in a process below the glass transition temperature, the Bow problem can be resolved by using a chemically amplified resist.

引用

页码：587 / 594

页数：4