Improvement of AlGaInP light emitting diode by sulfide passivation

被引：13
|
作者：
Su, YK
Wang, HC
Lin, CL
Chen, WB
Chen, SM
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan
[3] Epitech Technol Corp, Tainan 74145, Taiwan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2003年 / 15卷 / 10期
关键词：
AlGaInP; Fresnel loss; leakage current; light emitting diode (LED); passivation; roughness; sulfide;
D O I：
10.1109/LPT.2003.818064
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss,and effective injection of carriers were demonstrated.
引用
收藏
页码：1345 / 1347
页数：3
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