Improvement of AlGaInP light emitting diode by sulfide passivation

被引：13
|
作者：
Su, YK
Wang, HC
Lin, CL
Chen, WB
Chen, SM
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan
[3] Epitech Technol Corp, Tainan 74145, Taiwan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2003年 / 15卷 / 10期
关键词：
AlGaInP; Fresnel loss; leakage current; light emitting diode (LED); passivation; roughness; sulfide;
D O I：
10.1109/LPT.2003.818064
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss,and effective injection of carriers were demonstrated.
引用
收藏
页码：1345 / 1347
页数：3
相关论文
共 50 条
  • [1] Tunnel junction AlGaInP light emitting diode
    Wang, Guohong
    Shen, Guangdi
    Guo, Xia
    Gao, Guo
    Wei, Xin
    Zhang, Guangze
    Ma, Xiaoyu
    Li, Yuzhang
    Chen, Lianghui
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2002, 23 (06): : 628 - 631
  • [2] AlGaInP light emitting diode with metal reflector structure
    Jan, W
    Liao, TF
    Chen, TP
    Chang, CS
    Light-Emitting Diodes: Research, Manufacturing, and Applications IX, 2005, 5739 : 81 - 85
  • [3] AlGaInP light emitting diode with metal reflector structure
    Jan, W
    Chen, TP
    Chang, CS
    LIGHT -EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS VIII, 2004, 5366 : 62 - 65
  • [4] Improvement of AlInP-AlGaInP MQW light-emitting diode by meshed contact layer
    Wang, HC
    Su, YK
    Lin, CL
    Chen, WB
    Chen, SM
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (11) : 1491 - 1493
  • [5] Output Power of AlGaInP Light Emitting Diode Improved by Double Roughening AlGaInP Surfaces
    Huang, Ping-Wei
    Wu, YewChung Sermon
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (05) : H163 - H165
  • [6] AlGaInP light emitting diode with a current-blocking structure
    Wang, HC
    Su, YK
    Chung, YH
    Lin, CL
    Chen, WB
    Chen, SM
    SOLID-STATE ELECTRONICS, 2005, 49 (01) : 37 - 41
  • [7] AlGaInP light emitting diode with a modulation-doped superlattice
    Su, YK
    Wang, HC
    Lin, CL
    Chen, WB
    Chen, SM
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (7A): : L751 - L753
  • [8] Absorption of photons in the thin film AlGaInP light emitting diode
    Gao Wei
    Guo Weiling
    Zou Deshu
    Jiang Wenjing
    Liu Zike
    Shen Guangdi
    JOURNAL OF SEMICONDUCTORS, 2011, 32 (01)
  • [9] Effect of the passivation layers on organic light emitting diode
    Chen, WR
    Shih, NC
    Juang, FS
    2005 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, 2005, : 514 - 515
  • [10] Effect of the passivation layers on organic light emitting diode
    Chen, W.-R. (chenwr@mail.stut.edu.tw), (Institute of Electrical and Electronics Engineers Inc., 445 Hoes Lane / P.O. Box 1331, Piscataway, NJ 08855-1331, United States):
12345