Electrical, Luminescent and Structural Properties of Nanopillar GaN/InGaN Multi-Quantum-Well Structures Prepared by Dry Etching

被引：14
作者：
Polyakov, A. Y. [1 ]
Cho, Han-Su [2 ,3 ]
Yun, Jin-Hyeon [2 ,3 ]
Lee, In-Hwan [2 ,3 ]
Yakimov, E. B. [1 ,4 ]
Smirnov, N. B. [1 ]
Shcherbachev, K. D. [1 ]
机构：
[1] Natl Univ Sci & Technol MISiS, Moscow, Russia
[2] Chonbuk Natl Univ, Sch Adv Mat Engn, Jeonju 561756, South Korea
[3] Chonbuk Natl Univ, Res Ctr Adv Mat Dev, Jeonju 561756, South Korea
[4] RAS, Acad Chernogolovka, Inst Microelect Technol, Moscow 117901, Russia
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2016年 / 5卷 / 06期
基金：
新加坡国家研究基金会;
关键词：
LIGHT-EMITTING-DIODES; EXTRACTION EFFICIENCY; GAN; GAAS; PHOTOLUMINESCENCE; PHOTOEMISSION; ENHANCEMENT;
D O I：
10.1149/2.0171606jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
GaN/InGaN multiple quantum well (MQW) structures with undoped n-GaN cap imitating true light emitting diodes were grown on sapphire and converted to deep nanopillar (NP) structures by dry etching beyond the MQW region. Structural measurements, electrical measurements on Schottky diodes, microcathodoluminescence (MCL) spectra measurements indicate a strong relaxation of strain in NP MQWs manifested in the prominent increase of the bowing radius of the structures and in the blueshift of the MQW peak in MCL spectra. Various treatments of the as-etched NP MQWs (annealing at 700 degrees C, etching in KOH, and soaking in (NH4)(2)S) progressively decreased the leakage current of Schottky diodes and increased the MQW MCL peak intensity due to the suppression of the dry-etching damage of the nanopillar sidewalls. (C) 2016 The Electrochemical Society. All rights reserved.
引用
收藏
页码：Q165 / Q170
页数：6
相关论文
共 28 条
[1]   XPS analysis of surface chemistry of near surface region of epiready GaAs(100) surface treated with (NH4)2Sx solution [J].
Arabasz, S. ;
Bergignat, E. ;
Hollinger, G. ;
Szuber, J. .
APPLIED SURFACE SCIENCE, 2006, 252 (21) :7659-7663
[2]   Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure [J].
Ben Sedrine, N. ;
Esteves, T. C. ;
Rodrigues, J. ;
Rino, L. ;
Correia, M. R. ;
Sequeira, M. C. ;
Neves, A. J. ;
Alves, E. ;
Bockowski, M. ;
Edwards, P. R. ;
O'Donnell, K. P. ;
Lorenz, K. ;
Monteiro, T. .
SCIENTIFIC REPORTS, 2015, 5
[3]   Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence [J].
Cherns, D ;
Henley, SJ ;
Ponce, FA .
APPLIED PHYSICS LETTERS, 2001, 78 (18) :2691-2693
[4]   Electron beam and optical depth profiling of quasibulk GaN [J].
Chernyak, L ;
Osinsky, A ;
Nootz, G ;
Schulte, A ;
Jasinski, J ;
Benamara, M ;
Liliental-Weber, Z ;
Look, DC ;
Molnar, RJ .
APPLIED PHYSICS LETTERS, 2000, 77 (17) :2695-2697
[5]   Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening [J].
Fujii, T ;
Gao, Y ;
Sharma, R ;
Hu, EL ;
DenBaars, SP ;
Nakamura, S .
APPLIED PHYSICS LETTERS, 2004, 84 (06) :855-857
[6]   Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi-quantum wells [J].
Keller, S. ;
Schaake, C. ;
Fichtenbaum, N. A. ;
Neufeld, C. J. ;
Wu, Y. ;
McGroddy, K. ;
David, A. ;
DenBaars, S. P. ;
Weisbuch, C. ;
Speck, J. S. ;
Mishra, U. K. .
JOURNAL OF APPLIED PHYSICS, 2006, 100 (05)
[7]   Performance enhancement of GaN-based light emitting diodes by the interaction with localized surface plasmons [J].
Lee, In-Hwan ;
Jang, Lee-Woon ;
Polyakov, Alexander Y. .
NANO ENERGY, 2015, 13 :140-173
[8]   GaN based nanorods for solid state lighting [J].
Li, Shunfeng ;
Waag, Andreas .
JOURNAL OF APPLIED PHYSICS, 2012, 111 (07)
[9]   X-ray diffraction of III-nitrides [J].
Moram, M. A. ;
Vickers, M. E. .
REPORTS ON PROGRESS IN PHYSICS, 2009, 72 (03)
[10]   The roles of structural imperfections in InGaN-Based blue light-emitting diodes and laser diodes [J].
Nakamura, S .
SCIENCE, 1998, 281 (5379) :956-961
123