Interface phonons in cylindrical quantum dot heterostructure

被引:7
作者
Zhong, Qing-Hu [1 ]
Liu, Cui-Hong [1 ]
机构
[1] Guangzhou Univ, Guangzhou Higher Educ Mega Ctr, Sch Phys & Elect Engn, Guangzhou 510006, Guangdong, Peoples R China
关键词
interface phonon mode; electron-phonon interaction; quantum dot;
D O I
10.1016/j.spmi.2007.12.012
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The top interface optical (TIO) and side interface optical (SIO) phonon modes of a cylindrical GaAs/AlxGal-,rAs quantum dot are derived within the framework of dielectric continuum approximation. Results reveal that, in the case of taking the "two-mode" behavior of the AtyGal _xAs material into account, there exist eight branches of TIO phonon modes and four branches of SIO phonon modes. The dispersion frequencies of TIO or SIO phonon modes sensitively depend on the Al mole fraction x in the AIxGa I _xAs material. With increasing wavevector q (K), the frequency of each TIO (SIO) mode approaches one of the two frequency values of the single Al.,Ga -,As heterostructure. (c) 2008 Elsevier Ltd. All rights reserved.
引用
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页码:303 / 314
页数:12
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