High Performance Flexible Organic Thin Film Transistors (OTFTs) with Octadecyltrichlorsilane/Al2O3/Poly(4-vinylphenol) Multilayer Insulators

被引：14

作者：

Rahman, Mohammad Arifur ^{[2
]}

Kim, Hyunho ^{[1
]}

Lee, Young Kyu ^{[1
]}

Lee, Chiyoung ^{[1
]}

Nam, Hosoek ^{[1
]}

Lee, Jang-Sik ^{[1
]}

Soh, Hoesup ^{[1
]}

Lee, Jong-Kwon ^{[3
]}

Lee, Eun-Gu ^{[4
]}

Lee, Jaegab ^{[1
]}

机构：

[1] Kookmin Univ, Sch Adv Mat Engn, Ctr Mat & Proc Self Assembly, Seoul 136702, South Korea

[2] Univ Dhaka, Dept Chem, Dhaka 1000, Bangladesh

[3] Soon Chun Hyang Univ, Dept Display Mat Engn, Asna 336745, South Korea

[4] Chosun Univ, Kwangju 501759, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2012年 / 12卷 / 02期

关键词：

UV; Al2O3; OTS; OTFTs; FIELD-EFFECT TRANSISTORS; GATE INSULATOR; DIELECTRICS; PENTACENE; TRANSPORT; SURFACE; INTERFACES; MORPHOLOGY;

D O I：

10.1166/jnn.2012.4695

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The incorporation of a thin, atomic layer deposited Al2O3 layer in between a spin-coated poly-4-vinyl phenol (PVP) organic layer and octadecyltrichlorsilane (OTS) in the multilayer gate dielectric for pentacene organic thin film transistors on a n(+)-Si substrate reduced the gate leakage current and thereby significantly enhanced the current on/off ratio up to 2.8 x 10(6). Addition of the OTS monolayer on the UV-treated Al2O3 improved the crystallinity of the pentacene layer, where the OTS/UV-treated Al2O3 surfaces increased their contact angles to 100 degrees. X-ray diffraction (XRD) analysis revealed a more intense (001) crystal reflectance of pentacene deposited on OTS/UV-treated Al2O3 surface than that on OTS/Al2O3 surface. Moreover, the improved pentacene layer contributed to the field effect mobility (0.4 cm(2)/Vs) and subsequently improved the electrical performances of organic thin film transistor (OTFT) devices. This PVP/UV treated Al2O3/OTS multilayer gate dielectric stack was superior to those of the device with the single PVP gate dielectrics due to the improved crystallinity of pentacene.

引用

页码：1348 / 1352

页数：5

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