Carrier Conduction Characteristics in P3HT: PCBM Bulk Heterojunction Structures Under Sunlight Illumination

被引:0
作者
Lou, Yanhui [1 ]
Wang, Zhaokui [1 ]
Naka, Shigeki [1 ]
Okada, Hiroyuki [1 ]
机构
[1] Toyama Univ, Grad Sch Sci & Technol, Toyama 9308555, Japan
来源
9TH INTERNATIONAL CONFERENCE ON NANO-MOLECULAR ELECTRONICS | 2011年 / 14卷
关键词
Organic Solar Cells; Bulk heterojunction; Carrier injection; POLYMER SOLAR-CELLS; PHOTOVOLTAIC CELLS; EFFICIENCY; MORPHOLOGY; NETWORK;
D O I
10.1016/j.phpro.2011.05.041
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Injection properties of electrons and holes at the interface of electrodes/active layer for blending poly(3-hexylthiophene) (P3HT) and methanofullerene [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) based on structures of Au/MoO3/P3HT: PCBM/MoO3/Au as hole dominated device and Al alloy/P3HT: PCBM/Al alloy as electron dominated device were investigated. Both of hole and electron injections were ascribed to Schottky thermionic emission mechanism. The barrier height of carrier injection was estimated under a simulated air mass (AM) 1.5G spectrum illumination and dark conditions, respectively. The interfacial state at Al alloys/P3HT: PCBM interface was estimated to be 1.4 x 10(14) states/cm(2)/eV under illumination by extrapolating the relation of electron barrier heights and work functions using different Al alloys. (C) 2010 Published by Elsevier B.V.
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页数:5
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