A 2-D numerical simulation methodology for noise figure optimization in UHV/CVD SiGe HBT's

被引：3

作者：

Niu, GF ^{[1
]}

Ansley, WE ^{[1
]}

Zhang, SM ^{[1
]}

Cressler, JD ^{[1
]}

Groves, R ^{[1
]}

机构：

[1] Auburn Univ, Alabama Microelect Sci & Technol Ctr, Dept Elect Engn, Auburn, AL 36849 USA

来源：

1998 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS: DIGEST OF PAPERS | 1998年

关键词：

D O I：

10.1109/SMIC.1998.750172

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper explores the feasibility of combining calibrated ac 2-D numerical simulation and two of the latest Y-parameter-based noise models for predictive noise figure optimization in advanced UHV/CVD SiGe HBT's. At the operating current where the NF,, is the lowest, a close agreement between simulation using both noise models and measurement is achieved from 2 GHz to 18 GHz. The impact of collector doping level on noise figure is also discussed.

引用

页码：33 / 37

页数：5

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