Magnetic domain wall motion across a step of Dzyaloshinskii-Moriya interaction

被引:9
作者
Hong, Ik-Sun [1 ]
Lee, Seo-Won [2 ]
Lee, Kyung-Jin [1 ,2 ]
机构
[1] Korea Univ, KU KIST Grad Sch Converging Sci & Technol, Seoul 02841, South Korea
[2] Korea Univ, Dept Mat Sci & Engn, Seoul 02841, South Korea
基金
新加坡国家研究基金会;
关键词
Domain wall motion; Magnonic crystal; Dzyaloshinskii-Moriya interaction; Spin-orbit spin-transfer torque; Domain wall memory device; SPIN; EXCHANGE; DYNAMICS; DRIVEN;
D O I
10.1016/j.cap.2017.08.024
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Magnetic domain wall motion is numerically studied in a nanowire with a Dzyaloshinskii-Moriya interaction (DMI) step at which DMI varies in real space. The spatially modulated DMI results in the formation of asymmetric domain wall energy landscape across the step, which affects the domain wall motion significantly. Utilizing this DMI step, we propose a domain wall memory device where the switching of up-and down-state is induced by a spin-orbit spin-transfer torque (SOT)-driven domain wall motion. This domain wall memory device is expected to have a high switching efficiency. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:1576 / 1581
页数:6
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