Luminescence efficiency of hexagonal boron nitride

被引：0
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作者：
Barjon, Julien [1 ]
Plaud, Alexandre [1 ,2 ]
Sponza, Lorenzo [2 ]
Schue, Leonard [1 ,2 ]
Stenger, Ingrid [1 ]
Fossard, Frederic [2 ]
Watanabe, Kenji [3 ]
Taniguchi, Takashi [3 ]
Ducastelle, Francois [2 ]
Loiseau, Annick [2 ]
机构：
[1] Univ Paris Saclay, Univ Versailles St Quentin en Yvelines, CNRS, Grp Etud Matiere Condensee, Versailles, France
[2] Univ Paris Saclay, CNRS, ONERA, Lab Etud Microstruct, Chatilion, France
[3] Natl Inst Mat Sci, Tsukuba, Ibaraki, Japan
来源：
2019 COMPOUND SEMICONDUCTOR WEEK (CSW) | 2019年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页数：1
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