Enhanced thermoelectric power of Al and Sb doped In2Te3 thin films

被引：4
作者：
Vallem, Sowjanya [1 ]
Bangera, Kasturi, V [1 ]
Shivakumar, G. K. [2 ]
机构：
[1] Natl Inst Technol, Dept Phys, Surathkal 575025, Karnataka, India
[2] NMAM Inst Technol, Dept Phys, Nitte 574110, Karnataka, India
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2019年 / 93卷
关键词：
Doping; Thermoelectric power; Structural properties; Electrical properties;
D O I：
10.1016/j.mssp.2019.01.025
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Aluminium and antimony are used as dopants for In2Te3 to study their influence on the thermoelectric power of the films. Both aluminium and antimony are expected to replace indium in the film and contribute to the structural, electrical and thermoelectric behaviour of indium telluride. It is observed that addition of both Al and Sb dopants induced an additional phase of free Te. The electrical conductivity of In(2)Te(3 )films is observed to reduce with Al doping and increase with Sb doping when compared with the electrical conductivity of un-doped films. The thermoelectric power is found to be maximum for 2.1% Al doped and 1% Sb doped films. Moreover, the thermoelectric power factor of In2Te3 films is found to be enhanced 3.1 times for 2.1% doping of Al and 8.7 times for 1% Sb doping.
引用
收藏
页码：366 / 370
页数：5
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