Graphene Quantum Capacitors for High Frequency Tunable Analog Applications

被引：21

作者：

Moldovan, Clara F. ^{[1
]}

Vitale, Wolfgang A. ^{[1
]}

Sharma, Pankaj ^{[1
]}

Tamagnone, Michele ^{[2
]}

Mosig, Juan R. ^{[2
]}

Ionescu, Adrian M. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Nanoelect Devices Lab, CH-1015 Lausanne, Switzerland

[2] Ecole Polytech Fed Lausanne, Lab Electromagnet & Antennas, CH-1015 Lausanne, Switzerland

来源：

NANO LETTERS | 2016年 / 16卷 / 08期

关键词：

graphene; quantum capacitance; CVD; RF; tunable capacitors; SUSPENDED GRAPHENE; BALLISTIC TRANSPORT; HIGH-QUALITY; DEVICES; FABRICATION; MICROSCOPY; CARBON; FILMS;

D O I：

10.1021/acs.nanolett.5b05235

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Graphene quantum capacitors (GQC) are demonstrated to be enablers of radio-frequency (RF) functions through voltage-tuning of their capacitance. We show that GQC complements MEMS and MOSFETs in terms of performance for high frequency analog applications and tunability. We propose a CMOS compatible fabrication process and report the first experimental assessment of their performance at microwaves frequencies (up to 10 GHz), demonstrating experimental GQCs in the pF range with a tuning ratio of 1.34:1 within 1.25 V, and Q-factors up to 12 at 1 GHz. The figures of merit of graphene variable capacitors are studied in detail from 150 to 350 K Furthermore, we describe a systematic, graphene specific approach to optimize their performance and predict the figures of merit achieved if such a methodology is applied.

引用

页码：4746 / 4753

页数：8

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