A nanocluster route to zero- and one-dimensional quantum structures by MOCVD

被引：3

作者：

Gherasimova, M ^{[1
]}

Su, J ^{[1
]}

Cui, G ^{[1
]}

Ren, ZY ^{[1
]}

Jeon, SR ^{[1
]}

Han, J ^{[1
]}

He, Y ^{[1
]}

Song, YK ^{[1
]}

Nurmikko, AV ^{[1
]}

Ciuparu, D ^{[1
]}

Pfefferle, L ^{[1
]}

机构：

[1] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA

来源：

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7 | 2005年 / 2卷 / 07期

关键词：

D O I：

10.1002/pssc.200461572

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Zero-dimensional (quantum dot) and one-dimensional (nanowire) III-nitride structures are fabricated by metalorganic chemical vapor deposition by introducing metallic nanoclusters at the initial stages of the synthesis. GaN quantum dots are obtained by nitridation of liquid Ga clusters of controlled size and density, while nanowires are produced in the presence of metallic liquid phase catalysing the selective vapor-liquid-solid nucleation under the condition of low supersaturation in the growth environment. Nanostructures are characterized with atomic force microscopy, scanning electron microscopy, and photoluminescence. Optically active GaN quantum dots are obtained after annealing in nitrogen-rich environment.

引用

收藏

页码：2361 / 2364

页数：4

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