Dynamics and second-order nonlinear optical susceptibility of photoexcited carriers at Si(111) interfaces

被引：8
作者：
Bodlaki, D
Borguet, E [1 ]
机构：
[1] Univ Pittsburgh, Dept Chem, Pittsburgh, PA 15260 USA
[2] Univ Pittsburgh, Ctr Surface Sci, Pittsburgh, PA 15260 USA
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 12期
关键词：
D O I：
10.1063/1.1592893
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An interface specific investigation, by time-resolved second-harmonic generation, shows that photoexcited carrier dynamics at Si(111) interfaces depend strongly on surface termination. Oxide- and H-terminated surfaces show distinct transient behavior, with a surface recombination velocity <10(3) cm/s. Incompletely H-terminated Si(111) shows faster dynamics, correlating with less interface passivation. A simple model reveals that the second-order nonlinear optical susceptibility of photoexcited carriers is two orders of magnitude greater than that of the valence band electrons. (C) 2003 American Institute of Physics.
引用
收藏
页码：2357 / 2359
页数：3
相关论文
共 33 条
[1]  
Angermann H., 2001, SILICON BASED MAT DE, V1, P267
[2]  
Balk P., 1988, SI SIO2 SYSTEM
[3]   Picosecond infrared optical parametric amplifier for nonlinear interface spectroscopy [J].
Bodlaki, D ;
Borguet, E .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2000, 71 (11) :4050-4056
[4]  
BODLAKI D, UNPUB
[5]   MEASUREMENT OF ULTRAFAST HOT-CARRIER RELAXATION IN SILICON BY THIN-FILM-ENHANCED, TIME-RESOLVED REFLECTIVITY [J].
DOANY, FE ;
GRISCHKOWSKY, D .
APPLIED PHYSICS LETTERS, 1988, 52 (01) :36-38
[6]   Optical second harmonic spectroscopy of semiconductor surfaces: advances in microscopic understanding [J].
Downer, MC ;
Mendoza, BS ;
Gavrilenko, VI .
SURFACE AND INTERFACE ANALYSIS, 2001, 31 (10) :966-986
[7]   ELECTRON-ENERGY-LOSS CHARACTERIZATION OF THE H-TERMINATED SI(111) AND SI(100) SURFACES OBTAINED BY ETCHING IN NH4F [J].
DUMAS, P ;
CHABAL, YJ .
CHEMICAL PHYSICS LETTERS, 1991, 181 (06) :537-543
[8]   EQUILIBRIUM AND DYNAMIC PROCESSES AT INTERFACES BY 2ND HARMONIC AND SUM FREQUENCY GENERATION [J].
EISENTHAL, KB .
ANNUAL REVIEW OF PHYSICAL CHEMISTRY, 1992, 43 :627-661
[9]   UNDERSTANDING HOT-ELECTRON TRANSPORT IN SILICON DEVICES - IS THERE A SHORTCUT [J].
FISCHETTI, MV ;
LAUX, SE ;
CRABBE, E .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (02) :1058-1087
[10]   The formation of etch hillocks during step-flow etching of Si(111) [J].
Flidr, J ;
Huang, YC ;
Newton, TA ;
Hines, MA .
CHEMICAL PHYSICS LETTERS, 1999, 302 (1-2) :85-90
1234