Sequential tunneling transport characteristics of GaN/AlGaN coupled-quantum-well structures

被引：16

作者：

Sudradjat, Faisal ^{[1
,2
]}

Zhang, Wei ^{[1
,2
]}

Driscoll, Kristina ^{[1
,2
]}

Liao, Yitao ^{[1
,2
]}

Bhattacharyya, Anirban ^{[1
,2
]}

Thomidis, Christos ^{[1
,2
]}

Zhou, Lin ^{[3
]}

Smith, David J. ^{[3
]}

Moustakas, Theodore D. ^{[1
,2
]}

Paiella, Roberto ^{[1
,2
]}

机构：

[1] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA

[2] Boston Univ, Photon Ctr, Boston, MA 02215 USA

[3] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 10期

基金：

美国国家科学基金会;

关键词：

INTERSUBBAND ABSORPTION; CASCADE LASER; MU-M; DESIGN; DIODES; GAN;

D O I：

10.1063/1.3511334

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Vertical electronic transport in periodic GaN/AlGaN multiple-quantum-well structures grown on free-standing GaN substrates is investigated. Highly nonlinear current-voltage characteristics are measured, displaying a clear transition from a high-resistance state near zero applied bias to a low-resistance state as the voltage is increased. The measurement results, including their temperature dependence and the variations in turn-on voltage with subband structure and bias polarity are in full agreement with a picture of sequential tunneling through the ground-state subbands of adjacent coupled quantum wells. Scattering-assisted tunneling due to interface roughness or structural defects appears to be the dominant transport mechanism. The potential role of photon-assisted tunneling is also investigated. (C) 2010 American Institute of Physics. [doi:10.1063/1.3511334]

引用

页数：5

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