Terahertz conductivity characterization of nanostructured graphene-like films for optoelectronic applications

被引:9
作者
Dadrasnia, Ehsan [1 ]
Lamela, Horacio [1 ]
机构
[1] Univ Carlos III Madrid, Optoelect & Laser Technol Grp GOTL, Madrid 28911, Spain
关键词
terahertz; graphene; nanostructured thin film; conductivity; carrier response; optoelectronics; HIGH-FREQUENCY; TRANSISTORS; ROADMAP;
D O I
10.1117/1.JNP.9.093598
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Difficulty in deposition and integration of fragile graphene-like samples for optoelectronic devices may prevent a multiple contact measurement procedure. We employed noncontact and nondestructive transmission and reflection terahertz (THz)-pulsed spectroscopy to investigate not only the electrical conductivity, but also to study the optical properties of one-dimensional and two-dimensional graphene-like samples. The Drude and non-Drude models were applied to observe and compare the ultrafast carrier transport parameters and high mobility characteristic of such high conductance-nanostructured thin films without requirement for postprocess patterning. The diffusive coefficient and nanoscopic characteristic length from noncontact THz measurement enables us to predict the cut-off frequency of such devices in relevant optoelectronic applications in sub-THz and THz frequencies. The results show that the cut-off frequency of the devices increases with a reduction of the channel length. (C) 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
引用
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页数:11
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