Optical pulse generation from single-section InAs/GaAs quantum dot edge-emitting lasers

被引：0

作者：

Calo, C. ^{[1
]}

Merghem, K. ^{[1
]}

Rosales, R. ^{[1
]}

Galopin, E. ^{[1
]}

Moustapha, O. ^{[1
]}

Lemaitre, A. ^{[1
]}

Krestnikov, I. ^{[2
]}

Bouwmans, G. ^{[3
]}

Martinez, A. ^{[1
]}

Ramdane, A. ^{[1
]}

机构：

[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

[2] Innolume GmbH, D-44263 Dortmund, Germany

[3] Univ Lille, PhLAM IRCICA, CNRS, UMR8523,USR3380, F-59658 Villeneuve Dascq, France

来源：

2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pulse generation from single-section Fabry-Perot InAs/GaAs edge-emitting quantum dot lasers is reported at 1.3 mu m. Mode-locking performances of the devices are studied as function of injection current and optical spectrum shape. (C) 2013 Optical Society of America

引用

页数：2

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