Contact area lithography and pattern transfer of self-assembled organic monolayers on SiO2/Si substrates

被引:7
作者
Bae, Changdeuck [2 ]
Kim, Hyunchul [1 ]
Shin, Hyunjung [1 ]
机构
[1] Kookmin Univ, Sch Adv Mat Engn, Seoul 136702, South Korea
[2] Univ Hamburg, Inst Appl Phys, D-20355 Hamburg, Germany
关键词
FABRICATION; GOLD;
D O I
10.1039/c1cc10283d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We describe a procedure for one-step patterning and transfer of self-assembled organic monolayers (SAMs) on SiO2/Si substrates. This procedure was inspired from an idea of pattern formation at contact area, which realizes high patterning fidelity, and enables a universal approach for the micro/nanometre scale patterning of SAMs.
引用
收藏
页码:5145 / 5147
页数:3
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