High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors With HfOxNy/HfO2/HfOxNy Tristack Gate Dielectrics

被引：59

作者：

Yuan, Longyan ^{[1
,2
,3
]}

Zou, Xiao ^{[1
,4
]}

Fang, Guojia ^{[1
]}

Wan, Jiawei ^{[1
]}

Zhou, Hai ^{[1
]}

Zhao, Xingzhong ^{[1
]}

机构：

[1] Wuhan Univ, Sch Phys & Technol, Key Lab Artificial Micro & Nano Struct, Minist Educ,Dept Elect Sci & Technol, Wuhan 430074, Peoples R China

[2] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China

[3] Huazhong Univ Sci & Technol, Coll Optoelect Sci & Engn, Wuhan 430074, Peoples R China

[4] Jianghan Univ, Dept Electromachine Engn, Wuhan 430056, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 01期

基金：

国家高技术研究发展计划(863计划); 中国国家自然科学基金; 中国博士后科学基金;

关键词：

Amorphous; HfO2; HfOxNy; high permittivity; indium gallium zinc oxide (IGZO); thin-film transistors (TFTs);

D O I：

10.1109/LED.2010.2089426

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated and investigated amorphous indium gallium zinc oxide (alpha-IGZO) thin-film transistors (TFTs) by using HfOxNy/HfO2/HfOxNy (NON) as the gate dielectric. The NON tristack dielectric structure can increase the gate capacitance density, effectively improve interface properties of both the gate/dielectric and dielectric/active channels, suppress the charge trap density, and reduce the gate leakage. The alpha-IGZO TFT (W/L = 200/10 mu m) with NON shows superior performance such as a saturation current of 0.33 mA, an ON/OFF-current ratio of 2.2 x 10(6), a saturation mobility of 10.2 cm(2)/V . s, a source/contact resistivity of 83 Omega . cm, a subthreshold swing of 0.13 V/dec, and enhanced stressing reliability.

引用

页码：42 / 44

页数：3

共 12 条

[1] Charge carrier induced lattice strain and stress effects on As activation in Si [J].