Ferromagnetic properties of MoS2 film doped by Fe using chemical vapour deposition

被引：6

作者：

Park, Chang-Soo ^{[1
,2
]}

Shon, Yoon ^{[3
]}

Lee, Juwon ^{[3
]}

Kim, Eun Kyu ^{[1
,2
]}

机构：

[1] Hanyang Univ, Dept Phys, Seoul 04763, South Korea

[2] Hanyang Univ, Res Inst Convergence Basic Sci, Seoul 04763, South Korea

[3] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 04620, South Korea

来源：

SOLID STATE COMMUNICATIONS | 2020年 / 306卷

基金：

新加坡国家研究基金会;

关键词：

MoS2; Ferromagnetic semiconductor; Raman; Curie; MAGNETIC-PROPERTIES; NANOSHEETS; EPILAYERS;

D O I：

10.1016/j.ssc.2019.113776

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have investigated the ferromagnetic properties of MoS2 thin film doped by iron using chemical vapour deposition. The structure of film was determined to be poly-crystalline with various phases. The iron doped MoS2 film shows that the ferromagnetic hysteresis appears at room temperature, and also indicated two Curie temperatures. The remnant magnetization and coercive field at room temperature are 36 emu/cm(3) and 44 Oe. The elemental atomic concentration of iron doped MoS2 measured by x-ray photoelectron spectroscopy was 0.69 at. %.

引用

页数：4

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