Coupling effect on the removal mechanism and surface/subsurface characteristics of SiC during grinding process at the nanoscale

被引:53
|
作者
Meng, Binbin [1 ,2 ]
Yuan, Dandan [1 ]
Xu, Shaolin [1 ]
机构
[1] Southern Univ Sci & Technol, Dept Mech & Energy Engn, Shenzhen 518055, Peoples R China
[2] Wuhan Univ, Sch Power & Mech Engn, Wuhan 430000, Hubei, Peoples R China
关键词
SiC; Coupling effect; Deformation; Molecular dynamics; MOLECULAR-DYNAMICS SIMULATION; DEFORMATION MECHANISM; NANOSCRATCH TESTS; SCRATCH; REGIME; MODEL; WEAR;
D O I
10.1016/j.ceramint.2018.10.175
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this study, the influence mechanism of the coupling effect on the material removal process of SiC in nanoscale condition is investigated using the molecular dynamics method. The geometrical characteristics of a machined surface and the damage distribution under a coupling effect are analyzed. The influence law of the coupling effect on surface/subsurface features is also presented. According to the analysis results, the repeated and interference scratches with multi-abrasives, large-area machined surface morphology, and damage distribution are analyzed. This study is significant in understanding the removal mechanism of SiC during the grinding process at the nanoscale.
引用
收藏
页码:2483 / 2491
页数:9
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