A Low-Voltage Low-Power LC Oscillator Using the Diode-Connected SymFET

被引：1

作者：

Li, Xueqing ^{[1
]}

Tsai, Wei-Yu ^{[1
]}

Narayanan, Vijaykrishnan ^{[1
]}

Liu, Huichu ^{[2
]}

Datta, Suman ^{[2
]}

机构：

[1] Penn State Univ, Dept Comp Sci & Engn, University Pk, PA 16802 USA

[2] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

来源：

2014 IEEE COMPUTER SOCIETY ANNUAL SYMPOSIUM ON VLSI (ISVLSI) | 2014年

关键词：

low-power; low-voltage; negative differential resistance; oscillator; phase noise; SymFET; PHASE NOISE; ELECTRICAL NOISE; 1/F NOISE; GRAPHENE; VCO; TRANSISTORS; FREQUENCY; FEEDBACK; DEVICES;

D O I：

10.1109/ISVLSI.2014.26

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, a low-voltage low-power LC-tank oscillator design using the symmetric graphene tunneling field-effect transistor (SymFET) diode is presented. The SymFET takes advantage of the resonant current tunneling through two graphene layers, with a large current peak exhibiting negative differential resistance (NDR) when the drain-to-source voltage aligns the Dirac point. A Verilog-A SymFET model is presented with noise performance for circuit design and evaluation. The NDR phenomenon of the diode-connected SymFET is further explored, and oscillator design considerations are discussed for performance optimization. Simulation results show that the proposed SymFET 3.05 GHz oscillator has a simulated phase noise of -117 dBC/Hz at 1.0 MHz offset, with a power consumption of only 0.23 mW from a 0.30 V supply.

引用

页码：303 / 308

页数：6

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