Effect of B-complexes on lattice structure and electronic properties in heavily boron-doped diamond

被引:18
作者
Long, Run [1 ]
Dai, Ying [1 ]
Guo, Meng [1 ]
Yu, Lin [1 ]
Huang, Baibiao [1 ]
Zhang, Ruiqin [2 ,3 ]
Zhang, Wenjun [2 ,3 ]
机构
[1] Shandong Univ, Sch Phys & Microelect, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
[2] City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China
[3] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
基金
中国国家自然科学基金;
关键词
boron-doped diamond; superconducting transition; critical temperature T(C);
D O I
10.1016/j.diamond.2007.12.019
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
On the basis of first-principle calculations for a series of B-doped supercells models, we confirmed that the lattice parameter increases with the boron concentration in a proximity linear relation. The electronic structure shows that the impurity band induced by B-complexes except B dimer mixes with valence band and the Fermi level locates in the valence band in heavily boron-doped diamond, which may well explain recent superconducting transition experimental findings. Our results indicate that the superconducting critical temperature T(C) is not only related to the B concentration, but also affected by the B configurations in diamond lattice. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:234 / 239
页数:6
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