Effect of B-complexes on lattice structure and electronic properties in heavily boron-doped diamond

被引：18

作者：

Long, Run ^{[1
]}

Dai, Ying ^{[1
]}

Guo, Meng ^{[1
]}

Yu, Lin ^{[1
]}

Huang, Baibiao ^{[1
]}

Zhang, Ruiqin ^{[2
,3
]}

Zhang, Wenjun ^{[2
,3
]}

机构：

[1] Shandong Univ, Sch Phys & Microelect, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

[2] City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China

[3] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China

来源：

基金：

中国国家自然科学基金;

关键词：

boron-doped diamond; superconducting transition; critical temperature T(C);

D O I：

10.1016/j.diamond.2007.12.019

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

On the basis of first-principle calculations for a series of B-doped supercells models, we confirmed that the lattice parameter increases with the boron concentration in a proximity linear relation. The electronic structure shows that the impurity band induced by B-complexes except B dimer mixes with valence band and the Fermi level locates in the valence band in heavily boron-doped diamond, which may well explain recent superconducting transition experimental findings. Our results indicate that the superconducting critical temperature T(C) is not only related to the B concentration, but also affected by the B configurations in diamond lattice. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：234 / 239

页数：6

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