Low temperature synthesis and electrical properties of epitaxial Sr0.8Bi2.2Ta2O9 thin films

被引：12

作者：

Chattopadhyay, S ^{[1
]}

Kvit, A ^{[1
]}

Kumar, D ^{[1
]}

Sharma, AK ^{[1
]}

Sankar, J ^{[1
]}

Narayan, J ^{[1
]}

Knight, VS ^{[1
]}

Coleman, TS ^{[1
]}

Lee, CB ^{[1
]}

机构：

[1] N Carolina Agr & Technol State Univ, Dept Elect Engn, NSF Ctr Adv Mat & Smart Struct, Greensboro, NC 27411 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 22期

关键词：

D O I：

10.1063/1.1374226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality epitaxial thin films of Sr0.8Bi2.2Ta2O9 (SBT) were grown on LaNiO3 (LNO) bottom electrodes. The SBT/LNO heterostructure was fabricated on (001) oriented LaAlO3 substrates by pulsed laser ablation. X-ray diffraction and high resolution transmission electron microscopy revealed epitaxial growth of SBT and LNO layers along the (001) direction and sharp interfaces between the epilayers. The SBT films exhibited a dielectric constant of similar to 270 and the loss tangent varied from 0.02 to 0.04. The dielectric constant measured as a function of bias field revealed that the films were not ferroelectric in nature. The room temperature frequency response of the dielectric constant was observed to obey Curie-von Schweidler power law with an exponent of 0.02 in the range of 10 kHz-1 MHz. (C) 2001 American Institute of Physics.

引用

页码：3514 / 3516

页数：3

共 13 条

[1] Oriented growth of SrBi2Ta2O9 ferroelectric thin films [J].