Radio-frequency performance of a state-of-the-art 0.5-μm-rule thin-film SOI power MOSFET

被引：19

作者：

Matsumoto, S ^{[1
]}

Hiraoka, Y ^{[1
]}

Sakai, T ^{[1
]}

机构：

[1] Nippon Telegraph & Tel Corp, Telecommun Energy Labs, Kanagawa 2430198, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 06期

关键词：

power MOSFET; SOI technology;

D O I：

10.1109/16.925256

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A state-of-the-art 0.5-mum-rule thin-him SOI power MOSFET was fabricated to evaluate its radio-frequency.(RF) performance. The impact of the device structural parameters, such as channel length and drain offset length, on the RF performance of thin-film SOI power MOSFETs was also investigated. The fabricated device,vith channel length was 0.5 mum and drain offset length of 0.4 mum showed excellent performance. Its breakdown voltage was more than 10 V, which is sufficient for a lithium ion battery to be used as a power source. Its cutoff and maximum oscillation frequencies were 14.7 and 19 GHz, respectively. Its power-added efficiency at 2 GHz was 64%.

引用

页码：1251 / 1255

页数：5

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