Enhanced Terahertz Transmission of GaN Quantum Wells

被引：0

作者：

Laurent, T. ^{[1
]}

Sharma, R. ^{[1
]}

Torres, J. ^{[1
]}

Nouvel, P. ^{[1
]}

Blin, S. ^{[1
]}

Chusseau, L. ^{[1
]}

Palermo, C. ^{[1
]}

Varani, L. ^{[1
]}

Cordier, Y. ^{[2
]}

Chmielowska, M. ^{[2
]}

Faurie, J. -P. ^{[3
]}

Beaumont, B. ^{[3
]}

Starikov, E. ^{[4
]}

Shiktorov, P. ^{[4
]}

Gruzinskis, V. ^{[4
]}

机构：

[1] Univ Montpellier 2, CNRS, UMR 5214, Inst Elect Sud, Montpellier, France

[2] Ctr Recherche I Hetero Epitaxie ses Applicat, UPR 10 CNRS, Valbonne, France

[3] Lumilog, Chemin Saint Bernard, Vallauris, France

[4] Inst Semicond Phys, Vilnius, Lithuania

来源：

35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010) | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The transmission spectra at 300, 77, and 7 K of GaN quantum wells using a 220 - 325 GHz electronic source are investigated. Enhanced signals in the transmission spectra interpreted as preliminary indications of the activation of the OPTTR mechanism - are obtained when a bias voltage is applied to the device. Results can be considered as a relevant step in the development of devices capable to produce THz radiations.

引用

页数：2

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