Forming-Free CuC-Buffer Oxide Resistive Switching Behavior with Improved Resistance Ratio

被引：7

作者：

Kim, Seonghyun ^{[1
]}

Jo, Minseok ^{[1
]}

Park, Jubong ^{[1
]}

Lee, Joonmyoung ^{[1
]}

Lee, Wootae ^{[1
]}

Hwang, Hyunsang ^{[1
,2
]}

机构：

[1] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea

[2] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 08期

关键词：

annealing; copper compounds; diffusion; electrical conductivity transitions; electrical resistivity; fracture; MIM structures; platinum; solid electrolytes;

D O I：

10.1149/1.3591363

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We investigated the resistive switching behavior of a Pt/CuC/buffer oxide(BO)/Pt stack. By inserting an ultrathin BO layer, the resistance value at the off-state was increased, resulting in improved on/off resistance ratio. Furthermore, no high forming voltage was required because the Cu atoms diffused into the BO layer through the post metal annealing process, and changed in the effective switching layer into the ultrathin BO layer, where the actual formation and rupture of the Cu filaments take place. On the basis of results, it seems to be a promising candidate for FPGA applications, considering the forming-free operation and high on/off ratio. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3591363] All rights reserved.

引用

页码：H322 / H325

页数：4

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