Stable Nontrivial Z2 Topology in Ultrathin Bi (111) Films: A First-Principles Study

被引:329
作者
Liu, Zheng [1 ,2 ,8 ]
Liu, Chao-Xing [3 ]
Wu, Yong-Shi [4 ,5 ,6 ]
Duan, Wen-Hui [1 ,8 ]
Liu, Feng [7 ]
Wu, Jian [1 ,8 ]
机构
[1] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
[2] Tsinghua Univ, Inst Adv Study, Beijing 100084, Peoples R China
[3] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany
[4] Univ Utah, Dept Phys, Salt Lake City, UT 84112 USA
[5] Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
[6] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
[7] Univ Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA
[8] Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
基金
美国国家科学基金会;
关键词
HGTE QUANTUM-WELLS; SINGLE DIRAC CONE; ELECTRONIC-PROPERTIES; INSULATORS; BISMUTH; TRANSITION; SURFACE; BI2TE3; STATE; PHASE;
D O I
10.1103/PhysRevLett.107.136805
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Recently, there have been intense efforts in searching for new topological insulator materials. Based on first-principles calculations, we find that all the ultrathin Bi (111) films are characterized by a nontrivial Z(2) number independent of the film thickness, without the odd-even oscillation of topological triviality as commonly perceived. The stable nontrivial Z(2) topology is retained by the concurrent band gap inversions at multiple time-reversal-invariant k points with the increasing film thickness and associated with the intermediate interbilayer coupling of the Bi film. Our calculations further indicate that the presence of metallic surface states in thick Bi (111) films can be effectively removed by surface adsorption.
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页数:5
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