Control of device characteristics by passivation of graphene field effect transistors with polymers

被引：7
作者：
Jang, Geunsoo [1 ,2 ]
Yim, Woongbin [1 ,2 ]
Ahn, Y. H. [1 ,2 ]
Lee, Soonil [1 ,2 ]
Park, Ji-Yong [1 ,2 ]
机构：
[1] Ajou Univ, Dept Phys, Suwon 16499, South Korea
[2] Ajou Univ, Dept Energy Syst Res, Suwon 16499, South Korea
来源：
CURRENT APPLIED PHYSICS | 2016年 / 16卷 / 11期
基金：
新加坡国家研究基金会;
关键词：
Graphene; Field effect transistor; Passivation; Doping; Hysteresis; CHEMICAL-VAPOR-DEPOSITION; ELECTRONIC TRANSPORT; HYSTERESIS; FILMS; SUBSTRATE;
D O I：
10.1016/j.cap.2016.08.022
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigate the possibility of controlling electrical characteristics of graphene-based field effect transistors (GRFETs) by passivating top or bottom surface of graphene with polymers. As-fabricated GRFETs made of graphene synthesized with chemical vapor deposition and transferred to a Si/SiO2 substrate typically exhibit p-type doping and hysteresis originated from polymer residue and O-2/H2O in the ambient atmosphere. We applied poly(vinyl alcohol, PVA) and polydimethylsiloxane (PDMS) and their stacks as passivation layers on graphene at the bottom or top surface to control device characteristics. Depending on the polymer, n-type doping (compensation of p-type doping), suppression of hysteresis, and enhancement of mobility are observed. Air stability of the passivation methods is also investigated. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：1506 / 1510
页数：5
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