Superior Reliability and Low Self-Heating of a 45nm CMOS 39-GHz Power Amplifier for 5G mmWave Applications

被引:1
作者
Srinivasan, P. [1 ]
Syed, S. [1 ]
Sundaram, J. A. [1 ]
Moss, S. [1 ]
Jain, S. [1 ]
Colestock, P. [1 ]
机构
[1] GlobalFoundries, Santa Clara, CA 95054 USA
来源
2022 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC) | 2022年
关键词
5G; aging; HCI; load pull; mmWave power amplifier; reliability; SOI; stacked power amplifier;
D O I
10.1109/RFIC54546.2022.9863154
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 5G new-radio (NR) 2-stack differential 39 GHz Power Amplifier (PA) designed with ADNFETs in 45RFSOI technology is used to showcase superior CW and 5G performance and excellent reliability. Measured CW linear gain of similar to 12 dB, similar to 18 dBm Psat with PAE of 35.1% is seen while 5G QPSK results show Plin similar to 13dBm@-22dB EVM and similar to 17dBm@-19dB ACPR at 1.7V VDD back-off conditions. Time domain waveforms followed by RF reliability characterization show that off-state Hot Carrier Injection (HCI) is a key fail mechanism under matched-Z load and VSWR. Key RF degradation metrics from long term RF stress show Pout, Gain < 0.5dBm and PAE < 1% meeting overall 10yr lifetime criteria. Self-heating characterization show similar to 6 C increase at 1.6V/160mW dissipated power demonstrating excellent thermal stability. From 5G aging measurements and model sims, good model-hardware correlation is seen where gain degradation < 0.5 dB at 10y demonstrating overall superior performance and excellent reliability of the PA for 5G mmWave applications.
引用
收藏
页码:195 / 198
页数:4
相关论文
共 5 条
[1]  
Chen T., 2019, 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), P27
[2]   Novel mmWave NMOS Device for High Pout mmWave Power Amplifiers in 45RFSOI [J].
Jain, Sameer H. ;
Lederer, Dimitri ;
Kumar, Arvind ;
Saroop, Sudesh ;
Prindle, Chris ;
Srinivasan, P. ;
Liu, Wen ;
Achanta, Ravi ;
Kaltalioglu, Erdem ;
Moss, Stephen ;
Freeman, Greg ;
Colestock, Paul .
IEEE 51ST EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2021), 2021, :199-202
[3]   A novel methodology to evaluate RF reliability for SOI CMOS-based Power Amplifier mmWave applications [J].
Srinivasan, P. ;
Colestock, P. ;
Samuels, T. ;
Moss, S. ;
Guarin, F. ;
Min, B. .
2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2020,
[4]  
Srinivasan P., 2021, PROC IEEE INT REL PH, P1
[5]  
Syed Shafiullah, P IEEE MTT S 2020