Phonon scattering related to oxygen precipitation in Cz-silicon

被引:4
作者
Zeller, F [1 ]
Lassmann, K [1 ]
Eisenmenger, W [1 ]
机构
[1] Univ Stuttgart, Inst Phys 1, D-70550 Stuttgart, Germany
来源
PHYSICA B | 1999年 / 263卷
关键词
phonon spectroscopy; FTIR spectroscopy; oxygen precipitates; silicon;
D O I
10.1016/S0921-4526(98)01204-6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Using acoustic phonon spectroscopy with superconducting tunnelling junctions we have investigated the phonon scattering due to oxygen precipitation in heat-treated silicon samples with different organ and carbon contents. The results are compared to the infrared absorption of these samples. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:108 / 110
页数:3
相关论文
共 8 条
[1]   SOLUBILITY OF CARBON IN PULLED SILICON CRYSTALS [J].
BEAN, AR ;
NEWMAN, RC .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) :1211-&
[2]   OXYGEN PRECIPITATION IN SILICON [J].
BORGHESI, A ;
PIVAC, B ;
SASSELLA, A ;
STELLA, A .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (09) :4169-4244
[3]   INFRARED SPECTROSCOPICAL AND TEM INVESTIGATIONS OF OXYGEN PRECIPITATION IN SILICON-CRYSTALS WITH MEDIUM AND HIGH OXYGEN CONCENTRATIONS [J].
GAWORZEWSKI, P ;
HILD, E ;
KIRSCHT, FG ;
VECSERNYES, L .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 85 (01) :133-147
[4]  
Schrag G, 1998, PHYS STATUS SOLIDI A, V168, P37, DOI 10.1002/(SICI)1521-396X(199807)168:1<37::AID-PSSA37>3.0.CO
[5]  
2-Q
[6]  
SHIMURA F, 1995, OXYGEN SILICON SEMIC, V42
[7]   Quantitative phonon spectroscopy of interstitial oxygen in silicon [J].
Wurster, C ;
Dittrich, E ;
Scheitler, W ;
Lassmann, K ;
Eisenmenger, W ;
Zulehner, W .
PHYSICA B-CONDENSED MATTER, 1996, 219-20 :763-765
[8]   Phonon scattering in heat-treated Cz-silicon [J].
Zeller, F ;
Wurster, C ;
Lassmann, K ;
Eisenmenger, W .
DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 :399-404