Influence of strain and internal electric fields on band gaps in short period nitride based superlattices

被引：13

作者：

Gorczyca, I. ^{[1
]}

Skrobas, K. ^{[1
]}

Suski, T. ^{[1
]}

Christensen, N. E. ^{[2
]}

Svane, A. ^{[2
]}

机构：

[1] UNIPRESS, Inst High Pressures Phys, PL-01142 Warsaw, Poland

[2] Aarhus Univ, Dept Phys & Astron, DK-8000 Aarhus C, Denmark

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2015年 / 82卷

关键词：

Nitride superlattices; GaN/AIN; InN/GaN; Internal strain; Built-in electric field; Band structure calculations;

D O I：

10.1016/j.spmi.2015.02.033

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Short period superlattices of the form mGaN/nAlN, where m, n denote integer numbers of monolayers, and with growth direction along the wurtzite c-axis are studied by ab initio calculations. The dependence of the band gaps on composition is compared with results obtained previously for mInN/nGaN superlattices. The strain caused by mismatch to the substrate leads to significant deformations of bonds in InN/GaN superlattices, whereas this effect is smaller in GaN/AlN superlattices. The general trends in gap behavior can to a large extend be related to the strength of the internal electric field, E, in the respective GaN and InN quantum wells. In the GaN/AlN superlattices E reaches values as high as 8 MV/cm, while in the InN/GaN superlattices E approximate to 15 MV/cm may be reached. The strong electric fields are caused by spontaneous and piezoelectric polarizations. The latter contribution dominates in InN/GaN superlattices. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：438 / 446

页数：9

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