Deep Level Transient Spectroscopy and Pulse Height Measurements on High Resolution n-Type 4H-SiC Epitaxial Schottky Barrier Radiation Detectors

被引：0
|
作者：
Oner, Cihan [1 ]
Chowdhury, Towhid A. [1 ]
Santi, Enrico [1 ]
Mandal, Krishna C. [1 ]
机构：
[1] Univ South Carolina, Dept Elect Engn, Columbia, SC 29208 USA
来源：
2017 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (NSS/MIC) | 2017年
关键词：
ELECTRON-TRANSPORT; DEFECTS; DIODES; LAYERS; FABRICATION; TRAPS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High resolution 20 mu m n-type 4H-SiC epitaxial layer Schottky barrier radiation detectors were fabricated by depositing nickel (Ni) contacts using DC sputtering for both front- and backside. Current-Voltage (I-V) measurements at 300 K showed barrier height and diode ideality factor of similar to 1.14 eV and 1.19 respectively. The leakage current at -170 V reverse bias was similar to 1.0 x 10(-9) A. Capacitance-Voltage (C-V) measurements revealed a doping concentration of 2.9 x 10(14) cm(-3). Deep level transient spectroscopy (DLTS) was carried out to investigate defect levels and capture cross sections. Shallow and deep level defects at Ec - (0.14 +/- 0.01) eV, Ec - (0.18 +/- 0.01) eV, Ec - (0.62 +/- 0.02) eV, Ec - (1.42 +/- 0.04) eV, and Ec - (1.52 +/- 0.03) eV have been found. A 0.1 mu Ci Am-241 radiation source was used to assess the detector performance by pulse height spectroscopy (PHS) and the detector showed energy resolution of 0.38% full-width half maxima (FWHM) for alpha particles at 5447 keV.
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页数：5
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