Transition Metal Synthetic Ferrimagnets: Tunable Media for All-Optical Switching Driven by Nanoscale Spin Current

被引:9
作者
Dabrowski, Maciej [3 ]
Scott, Jade N. [1 ]
Hendren, William R. [1 ]
Forbes, Colin M. [1 ]
Frisk, Andreas [2 ]
Burn, David M. [2 ]
Newman, David G. [3 ]
Sait, Connor R. J. [3 ]
Keatley, Paul S. [3 ]
N'Diaye, Alpha T. [4 ]
Hesjedal, Thorsten [5 ]
van der Laan, Gerrit [2 ]
Bowman, Robert M. [1 ]
Hicken, Robert J. [3 ]
机构
[1] Queens Univ Belfast, Sch Math & Phys, Belfast BT7 1NN, Antrim, North Ireland
[2] Harwell Sci & Innovat Campus, Diamond Light Source, Didcot OX11 0DE, Oxon, England
[3] Univ Exeter, Dept Phys & Astron, Exeter EX4 4QL, Devon, England
[4] Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA
[5] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England
基金
英国工程与自然科学研究理事会;
关键词
all-optical magnetization switching; synthetic ferrimagnet; spintronics; magnetic recording; ultrafast spin current; negative remanence; ULTRAFAST; REVERSAL;
D O I
10.1021/acs.nanolett.1c03081
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
All-optical switching of magnetization has great potential for use in future ultrafast and energy efficient nanoscale magnetic storage devices. So far, research has been almost exclusively focused on rare-earth based materials, which limits device tunability and scalability. Here, we show that a perpendicularly magnetized synthetic ferrimagnet composed of two distinct transition metal ferromagnetic layers, Ni3Pt and Co, can exhibit helicity independent magnetization switching. Switching occurs between two equivalent remanent states with antiparallel alignment of the Ni3Pt and Co magnetic moments and is observable over a broad temperature range. Time-resolved measurements indicate that the switching is driven by a spin-polarized current passing through the subnanometer Ir interlayer. The magnetic properties of this model system may be tuned continuously via subnanoscale changes in the constituent layer thicknesses as well as growth conditions, allowing the underlying mechanisms to be elucidated and paving the way to a new class of data storage devices.
引用
收藏
页码:9210 / 9216
页数:7
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